Paper Title:
4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
  Abstract

This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and 95% of the breakdown voltage, the SPAD shows a low dark current of 57.2fA and 159fA, respectively. The quantum efficiency of 29.8% at 280nm and <0.007% at 400nm indicates a high UV-to-visible rejection ratio of >4300. Single photon counting measurement at 280nm shows that a single photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at the avalanche breakdown voltage of 116.8V.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1203-1206
DOI
10.4028/www.scientific.net/MSF.600-603.1203
Citation
J. Hu, X. B. Xin, P. Alexandrov, J. H. Zhao, B. L. VanMil, D. K. Gaskill, K. K. Lew, R. L. Myers-Ward, C. R. Eddy, "4H-SiC Single Photon Avalanche Diode for 280nm UV Applications ", Materials Science Forum, Vols. 600-603, pp. 1203-1206, 2009
Online since
September 2008
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$32.00
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