Paper Title:
Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
  Abstract

The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in the presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent is observed and correlated with the presence of the oxide and with the charge traps at the semiconductor/oxide interface. Photo-thermally stimulated current measurements evidenced that interface charge accumulation is optically promoted. Rise and fall photo-current measurements provided the time parameter of the trapping phenomenon.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1215-1218
DOI
10.4028/www.scientific.net/MSF.600-603.1215
Citation
A. Sciuto, F. Roccaforte, S. Di Franco, V. Raineri, "Schottky Barrier Lowering in 4H-SiC Schottky UV Detector", Materials Science Forum, Vols. 600-603, pp. 1215-1218, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Antonella Poggi, Francesco Moscatelli, Andrea Scorzoni, Giovanni Marino, Roberta Nipoti, Michele Sanmartin
Abstract:Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the...
979
Authors: Stefania Privitera, Massimo Camarda, Nicolò Piluso, Ruggero Anzalone, Francesco La Via
Chapter II: Fundamental and Characterization of SiC
Abstract:In this paper we have studied the connection between crystal quality and electrical transport in 4H-SiC by simultaneous...
257
Authors: C.D. Matthus, Tobias Erlbacher, Alexander Burenkov, Anton J. Bauer, Lothar Frey
4.5 Other Devices (Sensors, Detectors, ...)
Abstract:This paper describes the fabrication, characterization, and simulation of 4H-SiC pin-photodiodes for solar UV radiation detection. The...
1032