Paper Title:
3D Thermal Stress Model for SiC Power Modules
  Abstract

Three dimensional models of both single-chip and multiple-chip power sub-modules were generated using ANSYS in order to simulate the effects of various substrate materials, heat fluxes, heat transfer coefficients, and device placement configurations on temperature and thermal stress contours. Alumina, aluminum-nitride, and CVD diamond were compared as substrates. Heat fluxes of 100 to 500 watts/cm2 resulted in SiC device junction temperatures in the range of 350 to 650 K. The predicted maximum operating temperature for a chip, to which 300 watts/cm2 of heat flux was applied, would be 239°C (512 K). In the applied heat flux range, the minimum and maximum Von Mises stress of a simulated single SiC device sub-module was between 1.2 MPa to 2.4 GPa. The maximum shear stress at 300 watts/cm2 was predicted to be 243 MPa. Both the maximum and minimum chip temperature decreased with increasing heat transfer coefficient from 25 to 2500 watts/m2 K. With modest cooling, represented by a heat transfer coefficient (hconv) of 250 watts/m2 K, SiC chips operated at 300 watts/cm2 power density maintained junction temperatures Tj < 400 K. If consistent with simulation results, CVD diamond integrated substrates should be superior to those comprised of AlN or Al2O3. Asymmetric device placement in the multi-chip module proved more effective at avoiding potential hot spots than the symmetric configuration.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1227-1230
DOI
10.4028/www.scientific.net/MSF.600-603.1227
Citation
B. H. Tsao, J. Lawson, J. D. Scofield, C. Laing, J. Brown, "3D Thermal Stress Model for SiC Power Modules", Materials Science Forum, Vols. 600-603, pp. 1227-1230, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Diletta Sciti, Stefano Guicciardi, Cesare Melandri, A. Bellosi
913
Authors: Rong Lin Wang, Zhi Fa Wang, Jing Long Bu, Li Fang Zhang
Abstract:AlN-ZrO2 composites were prepared by solid state reaction in N2 atmosphere at 1500°C for 4h with PSZ and Al powders as raw materials....
778
Authors: Yu Long Fang, Jia Yun Yin, Zhi Hong Feng
Chapter 10: Functional Materials
Abstract:The influence of the strain of AlN buffer layers on the strain evolution of GaN epilayers grown on 3-in 6H-SiC substrates by metal-organic...
1242
Authors: Chun Ling Liu, Xue Yi Hou, Yan Ping Yao
Chapter 1: Machinery and Engineering Applications
Abstract:In order to reduce the catastrophic optical damage ( COD ) in the cavity surface of the traditional GaAs-LDs, this paper proposed the use of...
446
Authors: Rajappan Radhakrishnan Sumathi, Matthias Paun
Chapter 1: Bulk Growth
Abstract:Growth of AlN single crystals using carbon-polar surface of SiC substrate by PVT growth method has been attempted. AlN growth on the...
99