Paper Title:
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
  Abstract

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
123-126
DOI
10.4028/www.scientific.net/MSF.600-603.123
Citation
F. La Via, G. Izzo, M. Mauceri, G. Pistone, G. Condorelli, L.M.S. Perdicaro, G. Abbondanza, F. Portuese, G. Galvagno, S. Di Franco, L. Calcagno, G. Foti, G. L. Valente, D. Crippa, "SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate", Materials Science Forum, Vols. 600-603, pp. 123-126, 2009
Online since
September 2008
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