Paper Title:
Efficiency Improvement of PV-Inverters with SiC-DMOSFETs
  Abstract

The new MOSFET-generation with SiC-materials seems well suited for power electronic converters up to 1200 V operating-voltage, and particularly for grid-feeding PhotoVoltaic-inverters, which transfer the DC power of the solar panel to the AC grid. Their high switching speed and low on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V / 10 A SiC-DMOSFET samples made by CREE®.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1231-1234
DOI
10.4028/www.scientific.net/MSF.600-603.1231
Citation
B. Burger, D. Kranzer, O. Stalter, "Efficiency Improvement of PV-Inverters with SiC-DMOSFETs", Materials Science Forum, Vols. 600-603, pp. 1231-1234, 2009
Online since
September 2008
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Price
$32.00
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