Paper Title:
A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFETTM Switch
  Abstract

SuperFETTM MOSFETs and silicon carbide (SiC) Schottky diodes are applied to continuous conduction mode active power factor correction pre-regulators. SuperFETTM MOSFETs can reduce power losses dramatically with their extremely low RDS(ON) and fast switching. The SiC Schottky diode has virtually zero reverse recovery current and high thermal conductivity, and is close to an ideal diode for a CCM PFC circuit. Due to these outstanding switching characteristics, frequency can be increased. In this paper, the SiC Schottky diode’s and SuperFETTM MOSFET’s performance have been verified in a CCM PFC boost converter. These products can reduce the total power losses and enhance the system efficiency.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1235-1238
DOI
10.4028/www.scientific.net/MSF.600-603.1235
Citation
W. S. Choi, S. M. Young, R. L. Woodin, A.W. Witt, J. Shovlin, "A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFETTM Switch ", Materials Science Forum, Vols. 600-603, pp. 1235-1238, 2009
Online since
September 2008
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$32.00
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