Paper Title:
LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method
  Abstract

We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of 2.3×105 (cm-2), The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the + and – c directions, resulting in a Na concentration of 4.2 × 1014 (cm-3) in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1245-1250
DOI
10.4028/www.scientific.net/MSF.600-603.1245
Citation
F. Kawamura, H. Umeda, M. Morishita, R. Gejo, M. Tanpo, M. Imade, N. Miyoshi, M. Yoshimura, Y. Mori, T. Sasaki, Y. Kitaoka, "LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method", Materials Science Forum, Vols. 600-603, pp. 1245-1250, 2009
Online since
September 2008
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$32.00
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