Paper Title:
Progress in GaN MOSFET Technology
  Abstract

GaN MOS capacitors were characterized to optimize the electric properties of SiO2/GaN interface. With optimized anneal conditions, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19 eV near the conduction band and decreases deeper into the band gap. Enhancement-mode GaN MOSFETs were experimentally demonstrated on both p and n GaN epilayer with record high field-effect mobility of 167 cm2/V-s. Lateral RESURF-type GaN MOSFETs exhibit non-destructive high voltage (up to 940V) blocking capabilities. Other characterization including mobility orientation dependence, MOS-gated Hall mobility, current collapse and an NMOS inverter utilizing E/D mode GaN MOSFETs have also been experimentally demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1263-1268
DOI
10.4028/www.scientific.net/MSF.600-603.1263
Citation
T. P. Chow, W. Huang, T. Khan, K. Matocha, Y. Wang, "Progress in GaN MOSFET Technology", Materials Science Forum, Vols. 600-603, pp. 1263-1268, 2009
Online since
September 2008
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Price
$32.00
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