Paper Title:
Growth of Thick AlN Layers by High Temperature CVD (HTCVD)
  Abstract

To achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) α-Al2O3 and (0001) 4H or 6H SiC substrates between 1100 °C and 1750 °C. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Both influences of temperature and carrier gas on microstructure, crystalline state and growth rate are presented. Growth rates higher than 190 μm.h-1 have been reached. Thermodynamic calculations were carried out to understand the chemistry of AlN deposition. AlN layers were characterized by SEM and θ/2θ X-Ray Diffraction. Their epitaxial relationships with substrates were deduced from pole figures obtained by X-Ray diffraction on a texture goniometer.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1269-1272
DOI
10.4028/www.scientific.net/MSF.600-603.1269
Citation
A. Claudel, E. Blanquet, D. Chaussende, M. Audier, D. Pique, M. Pons, "Growth of Thick AlN Layers by High Temperature CVD (HTCVD) ", Materials Science Forum, Vols. 600-603, pp. 1269-1272, 2009
Online since
September 2008
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$32.00
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