Paper Title:
Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
  Abstract

A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
127-130
DOI
10.4028/www.scientific.net/MSF.600-603.127
Citation
G. Condorelli, M. Mauceri, G. Pistone, L.M.S. Perdicaro, G. Abbondanza, F. Portuese, G. L. Valente, D. Crippa, F. Giannazzo, F. La Via, "Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions", Materials Science Forum, Vols. 600-603, pp. 127-130, 2009
Online since
September 2008
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