Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 127-130 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.127 |
| Citation | Giuseppe Condorelli et al., 2008, Materials Science Forum, 600-603, 127 |
| Online since | September, 2008 |
| Authors | Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via |
| Keywords | Epitaxial Growth, High Growth Rate, Silicon Carbide (SiC), Trichlorosilane |
| Abstract | A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run. |
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