Paper Title:
Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition
  Abstract

Planar m-plane GaN was grown on (1100) m-plane 6H-SiC substrates using high-temperature AlN nucleation layers by metalorganic chemical vapor deposition. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) images showed striated features on the sample surface aligned along the GaN [1120] direction, which are perpendicular to those associated with (1120) a-plane GaN. The epitaxial relationship between the m-GaN and 6H-SiC was analyzed using high-resolution x-ray diffraction (XRD). In order to reduce the defect density, epitaxial lateral overgrowth (ELO) was carried out on an m-GaN template with mask stripes along the GaN [1120] direction, which makes the lateral growth fronts advance along the GaN c-axis. On-axis XRD rocking curves show that the full width at half maximum (FWHM) values for the ELO samples were reduced by nearly half when compared to those of the m-plane template without ELO. Clear atomic steps were observed in the wing regions by AFM. The absence of the striated features that are associated with the template could be indicative of the reduction of basal stacking faults in the ELO wings. Low-temperature photoluminescence (PL) spectra showed an excitonic emission at 3.47eV, a basal stacking fault (BSF)-related emission at 3.41 eV, and other defect-related emissions at 3.29 eV and 3.34 eV.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1273-1276
DOI
10.4028/www.scientific.net/MSF.600-603.1273
Citation
X. Ni, Ü. Özgür, S. Chevtchenko, J. Nie, H. Morkoç, R. P. Devaty, W. J. Choyke, "Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition", Materials Science Forum, Vols. 600-603, pp. 1273-1276, 2009
Online since
September 2008
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jae Kyeong Jeong, Ho Keun Song, Myung Yoon Um, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim
1597
Authors: Kazuki Takahashi, Kanji Yasui, Maki Suemitsu, Ariyuki Kato, Yuichiro Kuroki, Masasuke Takata, Tadashi Akahane
Abstract:Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG)...
261
Authors: Jae Chul Song, D.H. Kang, Byung Young Shim, Eun A Ko, Dong Wook Kim, Kannappan Santhakumar, Cheul Ro Lee
Abstract:GaN epilayers were grown on lens shaped patterned sapphire substrate (PSS) (0001) and unpatterned sapphire substrate (UPSS) (0001) by...
355
Authors: Yadira Arroyo Rojas Dasilva, Piere Ruterana, Lise Lahourcade, Eva Monroy, Gilles Nataf
Abstract:In the fabrication GaN-based devices, several growth orientations are currently under investigation in order to exploit material properties...
117
Authors: Saleh H. Abud, Hassan Zainuriah, Fong Kwong Yam, Alaa J. Ghazai
Abstract:In this paper, InGaN/GaN/AlN/Si (111) structure was grown using a plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural...
368