Paper Title:
Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates
  Abstract

Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the electrical behavior of these structures show the feasibility of this approach.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1277-1280
DOI
10.4028/www.scientific.net/MSF.600-603.1277
Citation
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne, "Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates ", Materials Science Forum, Vols. 600-603, pp. 1277-1280, 2009
Online since
September 2008
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Price
$32.00
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