Paper Title:
Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers
  Abstract

The growth process of semipolar GaN(10-12) on Si(001) offcut substrates with 3C-SiC buffer layers has been investigated. From XRD analysis, the difference in the crystal orientation between GaN(10-12) and 3C-SiC(001) has been found to be around 8˚ toward the [110] direction of the 3C-SiC templates. From TEM observations, a cubic-phase AlN seed layer is found to grow on 3C-SiC(001) templates, and the swift transition from the cubic phase to a hexagonal phase leads to the stable growth of hexagonal nitrides. Using 8˚-offcut Si substrates, it is possible to obtain a mirror-like surface of GaN(10-12) using an approximately 10-nm-thick AlN seed layer, which swiftly transitions from cubic AlN to hexagonal GaN.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1281-1284
DOI
10.4028/www.scientific.net/MSF.600-603.1281
Citation
Y. Abe, J. Komiyama, T. Isshiki, S. Suzuki, A. Yoshida, H. Ohishi, H. Nakanishi, "Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers ", Materials Science Forum, Vols. 600-603, pp. 1281-1284, 2009
Online since
September 2008
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