Paper Title:
Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique
  Abstract

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce AlN epitaxial layers. In this study, we report the surface morphology of AlN epitaxial layer grown on various substrates such as 3C-SiC (100), 4H-SiC (0001) with 8o off-axis (0001) plane tilted toward the <11 2 0> direction and on-axis 4H-SiC (0001). An average growth rate of AlN layer at 2350oC in 500 Torr of N2 was measured to be about 6μm/hr. While AlN layer grown on the 3C-SiC (100) substrate at 2350oC exhibited polycrystalline structure, AlN epitaxial layer grown on on-axis and off-axis 4H-SiC (0001) substrates had highly c-axis oriented epitaxial structure. In particular, the stacked structure of hexagonal plates was observed on off-axis substrate and the size of the hexagonal plates increased with growth time. Hexagonal plates were observed to be coalesced and the step-bunching was finally disappeared.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1285-1288
DOI
10.4028/www.scientific.net/MSF.600-603.1285
Citation
G. S. Lee, M. O. Kyun, H. H. Hwang, J. H. An, W. J. Lee, B. C. Shin, S. Nishino, "Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique", Materials Science Forum, Vols. 600-603, pp. 1285-1288, 2009
Online since
September 2008
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$32.00
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