Paper Title:
Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO2/Si Substrate
  Abstract

Aluminum nitride thin films were deposited on polycrystalline 3C-SiC intermediate layer by pulsed reactive magnetron sputtering system. Characteristics of AlN/SiC structures were investigated experimentally by means of FE-SEM, AFM, X-ray diffraction, and FT-IR. The columnar structure of AlN thin films was observed by FE-SEM. The surface roughness of AlN films on 3C-SiC layer was measured using AFM. X-ray diffraction pattern of AlN films on SiC layers highly were oriented as (002). Full width of half maximum (FWHM) of the rocking curve around (002) reflections was 1.3°. It was determined from infrared absorbance spectrum that the residual stress of AlN thin films grown on SiC layers was almost free. The presented results show that AlN thin films on 3C-SiC buffer layers can be used for various applications.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1289-1292
DOI
10.4028/www.scientific.net/MSF.600-603.1289
Citation
G. S. Chung, T. W. Lee, "Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO2/Si Substrate", Materials Science Forum, Vols. 600-603, pp. 1289-1292, 2009
Online since
September 2008
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Price
$32.00
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