Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1305-1308 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1305 |
| Citation | Masanobu Yoshikawa et al., 2008, Materials Science Forum, 600-603, 1305 |
| Online since | September, 2008 |
| Authors | Masanobu Yoshikawa, Masataka Murakami, Takaya Fujita, K. Inoue, K. Matsuda, H. Ishida, Hiroshi Harima |
| Keywords | Cathodoluminescence, Film, InGaN, Single-Quantum-Well, Spectroscopy, V-Defect |
| Abstract | We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level, using newly developed CL apparatus (SE-SEM-CL). From spectroscopic CL measurement, it has been found that the spectra change dramatically in the vicinity of V-defects in the region of £50nm. The SE-SEM-CL has a potential to detect the CL spectral variation at spatial resolution with £50nm. |
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