Paper Title:
Material Properties of GaN Films Grown on SiC/SOI Substrate
  Abstract

Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1313-1316
DOI
10.4028/www.scientific.net/MSF.600-603.1313
Citation
Z. C. Feng, C. Tran, I. T. Ferguson, J.H. Zhao, "Material Properties of GaN Films Grown on SiC/SOI Substrate", Materials Science Forum, Vols. 600-603, pp. 1313-1316, 2009
Online since
September 2008
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