Material Properties of GaN Films Grown on SiC/SOI Substrate |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1313-1316 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1313 |
| Citation | Zhe Chuan Feng et al., 2008, Materials Science Forum, 600-603, 1313 |
| Online since | September, 2008 |
| Authors | Zhe Chuan Feng, C. Tran, Ian T. Ferguson, J.H. Zhao |
| Keywords | 3C-SiC, GaN, MOCVD, Photoluminescence (PL), Raman Scattering, SOI, X-Ray Diffraction (XRD) |
| Abstract | Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth. |
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