Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1329-1332 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1329 |
| Citation | Mitsuaki Shimizu et al., 2008, Materials Science Forum, 600-603, 1329 |
| Online since | September, 2008 |
| Authors | Mitsuaki Shimizu, Masaki Inada, Shuichi Yagi, Akira Nakajima, Hajime Okumura, Akinori Ubukata, Yoshiki Yano, Nakao Akutsu |
| Keywords | AlGaN/GaN/AlGaN Double Heterojunction, Current Collapse, Field Effect Transistor |
| Abstract | The current collapse of normally-off mode AlGaN/GaN/AlGaN double heterojunction field effect transistors was investigated in comparison with the normal AlGaN/GaN heterojunction filed effect transistors. |
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