Paper Title:
Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
  Abstract

The current collapse of normally-off mode AlGaN/GaN/AlGaN double heterojunction field effect transistors was investigated in comparison with the normal AlGaN/GaN heterojunction filed effect transistors.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1329-1332
DOI
10.4028/www.scientific.net/MSF.600-603.1329
Citation
M. Shimizu, M. Inada, S. Yagi, A. Nakajima, H. Okumura, A. Ubukata, Y. Yano, N. Akutsu, "Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors", Materials Science Forum, Vols. 600-603, pp. 1329-1332, 2009
Online since
September 2008
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Price
$32.00
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