Paper Title:
Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
  Abstract

We investigated the current collapse characteristics of the fabricated MIS-HEMT with the SiO2, SiN and high-k gate insulator. TiO2 was employed as the high-k material. We found the significant drain current change in the switching characteristic when the insulator changes. The SiN MIS-HEMT showed good switching characteristic. On the other hand, the MIS-HEMTs with oxide insulator film showed large drain current reduction. We considered that the degradation of the switching characteristic is due to the current collapse.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1333-1336
DOI
10.4028/www.scientific.net/MSF.600-603.1333
Citation
S. Yagi, M. Shimizu, Y. Yano, A. Ubukata, N. Akutsu, "Current Collapse Characteristic of AlGaN/GaN MIS-HEMT", Materials Science Forum, Vols. 600-603, pp. 1333-1336, 2009
Online since
September 2008
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$32.00
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