Current Collapse Characteristic of AlGaN/GaN MIS-HEMT |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1333-1336 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1333 |
| Citation | Shuichi Yagi et al., 2008, Materials Science Forum, 600-603, 1333 |
| Online since | September, 2008 |
| Authors | Shuichi Yagi, Mitsuaki Shimizu, Yoshiki Yano, Akinori Ubukata, Nakao Akutsu |
| Keywords | AlGaN/GaN HEMT, Current Collapse, High-k, MIS |
| Abstract | We investigated the current collapse characteristics of the fabricated MIS-HEMT with the SiO2, SiN and high-k gate insulator. TiO2 was employed as the high-k material. We found the significant drain current change in the switching characteristic when the insulator changes. The SiN MIS-HEMT showed good switching characteristic. On the other hand, the MIS-HEMTs with oxide insulator film showed large drain current reduction. We considered that the degradation of the switching characteristic is due to the current collapse. |
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