Paper Title:
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
  Abstract

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1341-1344
DOI
10.4028/www.scientific.net/MSF.600-603.1341
Citation
F. Roccaforte, F. Iucolano, F. Giannazzo, S. Di Franco, V. Puglisi, V. Raineri, "Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier", Materials Science Forum, Vols. 600-603, pp. 1341-1344, 2009
Online since
September 2008
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Price
$32.00
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