Paper Title:
Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs
  Abstract

The effect of AlGaN surface traps on breakdown voltage VB and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs) were investigated using experimental measurement and numerical simulation. The drain current transient due to surface traps was systematically measured and analyzed, and the activation energy of a surface trap was evaluated as approximately 0.7 eV. Results from the device simulation of VB in HEMTs were in good agreement with the experimental results when assuming surface traps. The results indicate that surface traps increase VB, and induce a crucial current collapse.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1345-1348
DOI
10.4028/www.scientific.net/MSF.600-603.1345
Citation
A. Nakajima, S. Yagi, M. Shimizu, H. Okumura, "Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs", Materials Science Forum, Vols. 600-603, pp. 1345-1348, 2009
Online since
September 2008
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