Paper Title:
DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
  Abstract

We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of -650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1349-1351
DOI
10.4028/www.scientific.net/MSF.600-603.1349
Citation
K. Hirama, Y. Jingu, M. Ichikawa, H. Umezawa, H. Kawarada, "DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator", Materials Science Forum, Vols. 600-603, pp. 1349-1351, 2009
Online since
September 2008
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Price
$32.00
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