DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1349-1351 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1349 |
| Citation | Kazuyuki Hirama et al., 2008, Materials Science Forum, 600-603, 1349 |
| Online since | September, 2008 |
| Authors | Kazuyuki Hirama, Yoshikatsu Jingu, Masaru Ichikawa, Hitoshi Umezawa, Hiroshi Kawarada |
| Keywords | Diamond, Gate Insulator, MISFETs, RF |
| Abstract | We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of -650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported. |
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