Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 135-138 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.135 |
| Citation | Massimo Camarda et al., 2008, Materials Science Forum, 600-603, 135 |
| Online since | September, 2008 |
| Authors | Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via |
| Keywords | Atomic Force Microscope (AFM), Computer Simulation, Defect, Growth Model, Surface Structure |
| Abstract | A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results. |
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