Paper Title:
Diamond Doped by Hot Ion Implantation
  Abstract

Multiple P or S hot ion implantation to diamond substrates was performed at 800°C. Optical absorption spectra indicated that instantaneous annealing during hot ion implantation occurs. Temperature dependence of resistance demonstrated that a P as-implanted sample using a homoepitaxial diamond film substrate emerges a weak doping effect. Also on S implantation, a presence of a weak doping effect was observed in an as-implanted sample, but it was suggested that the dopant is not S itself but S and defect complex. However, post-implantation annealing resulted in high resistance of the samples and missing of such weak doping effects.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1353-1356
DOI
10.4028/www.scientific.net/MSF.600-603.1353
Citation
N. Tsubouchi, M. Ogura, H. Watanabe, A. Chayahara, H. Okushi, "Diamond Doped by Hot Ion Implantation", Materials Science Forum, Vols. 600-603, pp. 1353-1356, 2009
Online since
September 2008
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Price
$32.00
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