Paper Title:
Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
  Abstract

Basal Plane Dislocations (BPD) in SiC are thought to cause degradation of bipolar devices as they can trigger the formation and expansion of stacking faults during device operation. Therefore, epilayers without any BPD are strongly recommended for the achievement of long-term reliable bipolar devices. Such epilayers can be achieved by supporting the conversion of BPD into Threading Dislocations (TD), which depends on the epitaxial growth mode (as described in literature). In this work, the influence of several pre-treatments of the SiC substrate prior to epitaxial growth and different epitaxial growth parameters on the reduction of the BPDs in the SiC epilayers was investigated on 4° off-axis substrates. The dislocation content in substrates and epilayers was determined by Defect Selective Etching (DSE) in molten KOH. The averaged BPD density in epitaxial layers can be reduced to < 100 cm-2 for substrate preparation techniques and to < 30 cm-2 for well-suited epitaxial growth parameters. A certain combination of epitaxial growth parameters leads to < 3 BPD/cm2 in the epitaxial layer.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
143-146
DOI
10.4028/www.scientific.net/MSF.600-603.143
Citation
B. Kallinger, B. Thomas, J. Friedrich, "Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 600-603, pp. 143-146, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ze Hong Zhang, Tangali S. Sudarshan
Abstract:A method was developed in our laboratory to grow low basal plane dislocation (BPD) density and BPD-free SiC epilayers. The key approach is...
243
Authors: Birgit Kallinger, Bernd Thomas, Sebastian Polster, Patrick Berwian, Jochen Friedrich
Abstract:Basal Plane Dislocations (BPDs) in SiC are thought to cause degradation of bipolar diodes with blocking voltages > 2kV by triggering the...
299
Authors: Hai Zheng Song, Tangali S. Sudarshan
Chapter 2: SiC Epitaxial Growth
Abstract:An optimized molten KOH-NaOH eutectic etching method is developed to reveal defects in highly n-doped SiC substrates and to pre-treat the...
125
Authors: Milan Yazdanfar, Henrik Pedersen, Olof Kordina, Erik Janzén
Chapter 2: SiC Epitaxial Growth
Abstract:The effect of process parameters such as growth temperature, C/Si ratio, etching time, and Si/H2 ratio on dislocation density was...
159