Paper Title:
Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
  Abstract

Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was investigated. The growth rate of 4H-SiC was investigated as a function of the growth temperature and source flow rate. The FWHM values of epilayers as the growth temperature and source flow rate also investigated. The growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3.0 μm/h and the background doping level of 4H-SiC epilayer was mid 1015/cm3.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
151-154
DOI
10.4028/www.scientific.net/MSF.600-603.151
Citation
H. S. Seo, H. G. Song, J. H. Moon, J. H. Yim, M. S. Oh, J. H. Lee, Y. J. Choi, H. J. Kim, "Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM", Materials Science Forum, Vols. 600-603, pp. 151-154, 2009
Online since
September 2008
Keywords
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