Paper Title:
Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC
  Abstract

In this work, nitrogen doping was investigated during the low-temperature halo-carbon epitaxial growth of 4H-SiC on Si- and C-faces. The dependencies of nitrogen incorporation on nitrogen flow rate, Si/C ratio, growth rate, and temperature were investigated. It was established that the efficiency of nitrogen incorporation for the C-face growth at 1300 °C is higher than that for the Si-face for a wide range of the growth conditions. Seeming deviation of the Si/C ratio dependence from the “site-competition” trend confirmed the critical role of the silicon vapor condensation during the low-temperature epitaxy. Opposite trends for the nitrogen doping dependence on the growth rate were observed on the Si- and C-faces. Finally, a complex temperature dependence of the nitrogen doping in the temperature range from 1300 to 1450 0C was observed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
159-162
DOI
10.4028/www.scientific.net/MSF.600-603.159
Citation
K. Chindanon, H. D. Lin, G. Melnychuk, Y. Koshka, "Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC", Materials Science Forum, Vols. 600-603, pp. 159-162, 2009
Online since
September 2008
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$32.00
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