In this work, nitrogen doping was investigated during the low-temperature halo-carbon epitaxial growth of 4H-SiC on Si- and C-faces. The dependencies of nitrogen incorporation on nitrogen flow rate, Si/C ratio, growth rate, and temperature were investigated. It was established that the efficiency of nitrogen incorporation for the C-face growth at 1300 °C is higher than that for the Si-face for a wide range of the growth conditions. Seeming deviation of the Si/C ratio dependence from the “site-competition” trend confirmed the critical role of the silicon vapor condensation during the low-temperature epitaxy. Opposite trends for the nitrogen doping dependence on the growth rate were observed on the Si- and C-faces. Finally, a complex temperature dependence of the nitrogen doping in the temperature range from 1300 to 1450 0C was observed.