Paper Title:
Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
  Abstract

In this work, the local-loading effect and its influence on the growth rate enhancement and the growth rate non-homogeneity is investigated during the halo-carbon low-temperature selective epitaxial growth (LTSEG) using an SiO2 mask. The average growth rate during the LTSEG can be more than three-times higher than in blanket epitaxy at the same growth conditions. Both the size of the LTSEG seed windows and the surrounding area covered with the mask determine the growth rate non-homogeneity. A model for predicting the growth rate distribution is suggested.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
163-166
DOI
10.4028/www.scientific.net/MSF.600-603.163
Citation
H. Das, B. Krishnan, G. Melnychuk, Y. Koshka, "Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method", Materials Science Forum, Vols. 600-603, pp. 163-166, 2009
Online since
September 2008
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$32.00
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