Paper Title:

Solution Growth of Off-Axis 4H-SiC for Power Device Application

Periodical Materials Science Forum (Volumes 600 - 603)
Main Theme Silicon Carbide and Related Materials 2007
Edited by Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages 179-182
DOI 10.4028/www.scientific.net/MSF.600-603.179
Citation Ryo Hattori et al., 2008, Materials Science Forum, 600-603, 179
Online since September, 2008
Authors Ryo Hattori, Kazuhiko Kusunoki, Nobuyuki Yashiro, Kazuhito Kamei
Keywords BPD, Electrophoretic Deposition (EPD), Off-Axis, Silicon Carbide (SiC), Solution Growth, TED
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Abstract

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.