Paper Title:
Solution Growth of Off-Axis 4H-SiC for Power Device Application
  Abstract

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
179-182
DOI
10.4028/www.scientific.net/MSF.600-603.179
Citation
R. Hattori, K. Kusunoki, N. Yashiro, K. Kamei, "Solution Growth of Off-Axis 4H-SiC for Power Device Application", Materials Science Forum, Vols. 600-603, pp. 179-182, 2009
Online since
September 2008
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Price
$32.00
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