Paper Title:
Epitaxial TaC Films for the Selective Area Growth of SiC
  Abstract

At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000°C, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
183-186
DOI
10.4028/www.scientific.net/MSF.600-603.183
Citation
K. A. Jones, T.S. Zheleva, R.D. Vispute, S. S. Hullavarad, M. Ervin, S. Dhar, "Epitaxial TaC Films for the Selective Area Growth of SiC", Materials Science Forum, Vols. 600-603, pp. 183-186, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Dan Min Liu, Wei Peng Liu, Hong Li Suo, Mei Ling Zhou
Abstract:YBa2Cu3O7-δ (YBCO) films were deposited on (100), (110) and (111) oriented silver single crystals and {100}<100>, {110}<211> ,...
1383
Authors: Naru Nemoto, Naoki Wakiya, Kazuo Shinozaki, Takanori Kiguchi, Keisuke Satoh, Masatoshi Ishii, Masao Kondo, Kazuaki Kurihara, Nobuyasu Mizutani
Abstract:Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers....
265
Authors: Yasuo Hirabayashi, Satoru Kaneko, Kensuke Akiyama
Abstract:The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without...
247
Authors: Elena Tschumak, Katja Tonisch, Jörg Pezoldt, Donat J. As
Abstract:Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction....
943
Authors: Zhen Zhu, Jin Ma, Cai Na Luan, Fan Yang, Ling Yi Kong
Abstract:SnO2 thin films have been deposited on 6H-SiC(0001) substrates by metalorganic chemical vapor deposition (MOCVD) system. The structural and...
1539