Paper Title:
Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
  Abstract

We present p-type doping of bulk SiC crystals by the modified physical vapor transport (M-PVT) technique using TMA (Tri-Methyl-Aluminum). Using TMA as a dopant precursor allows a quite well defined crystal growth process control. The issue of improvement of conductivity (reduction of substrate resistivity) by reduction of unintentional acceptor compensation by nitrogen is addressed. It is shown that a decrease of compensation from approx. 3%...10% to approx. 0.5%...2.5% leads to a charge carrier mobility and, hence, conductivity increase of about factor two.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
19-22
DOI
10.4028/www.scientific.net/MSF.600-603.19
Citation
P. Hens, U. Künecke, P. J. Wellmann, "Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum", Materials Science Forum, Vols. 600-603, pp. 19-22, 2009
Online since
September 2008
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$32.00
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