Paper Title:
Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique
  Abstract

We have successfully grown 3C-SiC(111) single crystals 10mm x 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 105-106 /cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
191-194
DOI
10.4028/www.scientific.net/MSF.600-603.191
Citation
T. Tanaka, N. Yashiro, K. Kusunoki, K. Kamei, A. Yauchi, "Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique ", Materials Science Forum, Vols. 600-603, pp. 191-194, 2009
Online since
September 2008
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$32.00
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