Paper Title:
Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
  Abstract

This study refers, through different microscopies, about the carbonization effects on differently oriented Si surfaces. A statistical study on the relationship between some process parameters (such as temperature, process time) and void dimensions and density, for three Si substrate orientations, is reported.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
215-218
DOI
10.4028/www.scientific.net/MSF.600-603.215
Citation
A. Severino, C. Bongiorno, R. Anzalone, G. Abbondanza, M. Mauceri, G. Condorelli, G. Foti, F. La Via, "Void Formation in Differently Oriented Si in the Early Stage of SiC Growth", Materials Science Forum, Vols. 600-603, pp. 215-218, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Philip Hens, Julian Müller, Erdmann Spiecker, Peter J. Wellmann
Chapter 3: Physical Properties and Characterization of SiC
Abstract:In all heteroepitaxial systems the interface between substrate and layer is a crucial point. In this work SEM and TEM studies on the...
423
Authors: Ruggero Anzalone, Nicolò Piluso, Riccardo Reitano, Alessandra Alberti, Patrick Fiorenza, Marco Salanitri, Andrea Severino, Simona Lorenti, G. Arena, Salvatore Coffa, Francesco La Via
1.2 Epitaxial and Thin Films Growth
Abstract:A study of the carbonization process and of a low temperature buffer layer on the Cubic Silicon Carbide (3C-SiC) epitaxial growth has been...
159