Paper Title:
3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth
  Abstract

Cubic silicon carbide (3C-SiC) growth using Pendeo-epitaxy technique was successfully achieved on Si(001) substrates. 3C-SiC was grown by chemical vapor deposition (CVD) with silane and propane as precursors. Effects of underlying stripes and seed 3C-SiC layers thickness on PE 3C-SiC films were investigated. Root mean square (RMS) measurements using atomic force microscope (AFM) showed that surface morphology of PE 3C-SiC films remarkably improves with an increase of the seed 3C-SiC layer thickness, and the values were from 9.8 nm for 3 µm thick seed layer to 0.5 nm for 10 µm thick seed layer thickness. Additionally, domain boundary densities were counted, and the values also strongly depend on the seed layer thickness: from >1500/mm2 for 3 µm seed layer thickness to <100/mm2 for 10 µm seed layer thickness. Pendeo-epiaxial growth profiles with various width/separation dimensions of stripes were also investigated, and stripes with width of 10 µm and separation of 5 µm provide the best profile and process viability.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
219-222
DOI
10.4028/www.scientific.net/MSF.600-603.219
Citation
B. C. Kim, M. A. Capano, "3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth", Materials Science Forum, Vols. 600-603, pp. 219-222, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A. Shoji, Mitsutaka Nakamura, K. Mitikami, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino
Abstract:The pendeo epitaxial growth has been applied for the growth of 3C-SiC on (001) Si substrates. This growth was performed by VPE using...
221
Authors: Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku
Abstract:SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was...
9
Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Maciej Gała, Kinga Kościewicz, Ryszard Diduszko, Rafał Bożek
Abstract:4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC...
15
Authors: Lei Ma, Wei Guang Yang, Ya Li Wang, Gong Long Liu, Ke Tang, Lin Jun Wang, Wei Min Shi
Optical/Electronic/Magnetic Materials
Abstract:Polycrystalline α-HgI2 films have been grown through combining vertical deposition method with hot wall vapor phase deposition...
1237
Authors: Sang Il Lee, Jung Young Jung, Mi Seon Park, Hee Tae Lee, Doe Hyung Lee, Won Jae Lee, Soon Ku Hong, Im Gyu Yeo, Heung Rak Kim, Myong Chuel Chun
Chapter 1: Bulk Growth
Abstract:SiC crystal ingots were grown on 6H-SiC dual-seed crystal with different surface properties by a PVT (Physical Vapor Transport) technique....
11