Paper Title:
Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon
  Abstract

3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the growth parameters, the residual strain in the 3C-SiC layer was seen to be tensile or compressive. In this work, the influence of parameters, such as growth temperature and C/Si ratio in the vapour phase, on residual strain and macroscopic layer bow is investigated. We found that the wafer bow changes from convex, at a deposition temperature of 1270° C, to concave at 1370° C. High resolution x-ray diffraction data indicate that the crystal-line perfection of the layers is lower for decreasing deposition temperature and increasing compres-sive strain. No remarkable influence of the C/Si ratio in the gaseous atmosphere on the FWHM of the rocking curve was observed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
223-226
DOI
10.4028/www.scientific.net/MSF.600-603.223
Citation
G. Wagner, J. Schwarzkopf, M. Schmidbauer, R. Fornari, "Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon", Materials Science Forum, Vols. 600-603, pp. 223-226, 2009
Online since
September 2008
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$32.00
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