Paper Title:
Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
  Abstract

One of the main challenging tasks in the prospective technology is the buckling suppression of the 3C-SiC film due to the melting and solidification process and the stress relief as a consequence of the short time Si melting during the Flash Lamp Annealing. To overcome this effect and to stabilize a flat surface morphology an alternative i-FlASiC process was developed. This work refers to the influence of the layer stack modifications by doping and meltstop formation by ion implantation on the wafer buckling. The samples were studied by transmission electron microscopy, high resolution x-ray diffraction and infrared ellipsometry. The aim was to optimize the doping and flash lamp annealing conditions in relation to the i-FLASiC layer stack modification.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
239-242
DOI
10.4028/www.scientific.net/MSF.600-603.239
Citation
A. Andreadou, J. Pezoldt, C. Förster, E. K. Polychroniadis, M. Voelskow, W. Skorupa, "Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing ", Materials Science Forum, Vols. 600-603, pp. 239-242, 2009
Online since
September 2008
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Price
$32.00
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