Paper Title:
3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
  Abstract

The aim of this work is to improve the heteroepitaxial growth process of 3C-SiC on Si substrates using Trichlorosilane (SiHCl3) as the silicon growth precursor. With this precursor it has been shown that it is possible to simultaneously increase the growth rate of the process and avoid the nucleation of silicon droplets in the gas phase. Growth experiments were conducted on three (3) Si substrate orientations in order to assess the impact of the Si substrate on the resulting 3C-SiC film. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) analysis show the important role of the substrate orientation for the growth process. The different orientation of the substrate modifies the morphology of the 3C-SiC crystalline structure, mostly by changing the density of micro-twins and stacking faults inside the film.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
243-246
DOI
10.4028/www.scientific.net/MSF.600-603.243
Citation
R. Anzalone, A. Severino, G. D'Arrigo, C. Bongiorno, P. Fiorenza, G. Foti, G. Condorelli, M. Mauceri, G. Abbondanza, F. La Via, "3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.", Materials Science Forum, Vols. 600-603, pp. 243-246, 2009
Online since
September 2008
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