Paper Title:
Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas
  Abstract

The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
247-250
DOI
10.4028/www.scientific.net/MSF.600-603.247
Citation
Y. Hirabayashi, S. Kaneko, K. Akiyama, "Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas", Materials Science Forum, Vols. 600-603, pp. 247-250, 2009
Online since
September 2008
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$32.00
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