Paper Title:
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer
  Abstract

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
251-254
DOI
10.4028/www.scientific.net/MSF.600-603.251
Citation
Y. M. Zhao, G. S. Sun, X. F. Liu, J. Y. Li, W. S. Zhao, L. Wang, J. M. Li, Y. P. Zeng, "Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer", Materials Science Forum, Vols. 600-603, pp. 251-254, 2009
Online since
September 2008
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Price
$32.00
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