Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 27-30 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.27 |
| Citation | Eugene Y. Tupitsyn et al., 2008, Materials Science Forum, 600-603, 27 |
| Online since | September, 2008 |
| Authors | Eugene Y. Tupitsyn, Alexander Galyukov, Maxim V. Bogdanov, Alexey Kulik, Mark S. Ramm, Yuri N. Makarov, Tangali S. Sudarshan |
| Keywords | 4H-SiC, Gradient, Growth Rate, Modeling, SiC Bulk Growth |
| Abstract | In this work the problem of growth rate decaying during growth is considered. A new design and growth profiles are suggested in order to reduce deviations of growth parameters during the process of growth. |
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