Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
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| Journal |
Materials Science Forum (Volumes 600 - 603) |
| Volume |
Silicon Carbide and Related Materials 2007 |
| Edited by |
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages |
27-30 |
| DOI |
10.4028/www.scientific.net/MSF.600-603.27 |
| Online since |
September, 2008 |
| Authors |
Eugene Y. Tupitsyn,
Alexander Galyukov,
Maxim V. Bogdanov,
Alexey Kulik,
Mark S. Ramm,
Yuri N. Makarov,
Tangali S. Sudarshan
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| Keywords |
4H-SiC, Gradient, Growth Rate, Modeling, SiC Bulk Growth |
| Abstract |
In this work the problem of growth rate decaying during growth is considered. A new design and growth profiles are suggested in order to reduce deviations of growth parameters during the process of growth. |
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