Paper Title:
Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
  Abstract

In this work the problem of growth rate decaying during growth is considered. A new design and growth profiles are suggested in order to reduce deviations of growth parameters during the process of growth.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
27-30
DOI
10.4028/www.scientific.net/MSF.600-603.27
Citation
E. Y. Tupitsyn, A. Galyukov, M. V. Bogdanov, A. Kulik, M. S. Ramm, Y. N. Makarov, T. S. Sudarshan, "Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace ", Materials Science Forum, Vols. 600-603, pp. 27-30, 2009
Online since
September 2008
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Price
$32.00
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