Paper Title:
EPR Identification of Defects and Impurities in SiC: To be Decisive
  Abstract

In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
279-284
DOI
10.4028/www.scientific.net/MSF.600-603.279
Citation
J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzén, T. Ohshima, "EPR Identification of Defects and Impurities in SiC: To be Decisive", Materials Science Forum, Vols. 600-603, pp. 279-284, 2009
Online since
September 2008
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Price
$32.00
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