Paper Title:
Defects Identified in SiC and Their Implications
  Abstract

Defect signatures, such as deep level positions, hyperfine parameters, local vibrational modes and optical transitions characterize a defect and enable the identification of defect centers. This identification is a key to an understanding of complex phenomena like the defect kinetics. Albeit density functional theory enabled the identification of several defects and their kinetic properties, a new approach is needed to address the optical excitation of defect. Within a quasiparticle theory and taking into account excitonic effects we analyze the excited states of VC +.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
285-290
DOI
10.4028/www.scientific.net/MSF.600-603.285
Citation
M. Bockstedte, A. Marini, A. Gali, O. Pankratov, A. Rubio, "Defects Identified in SiC and Their Implications", Materials Science Forum, Vols. 600-603, pp. 285-290, 2009
Online since
September 2008
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$32.00
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