Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces

Choyke, Wolfgang J.; Starke, Ulrich; Johansson, Leif I.; Virojanadara, Charíya; Hetzel, M.

Paper Titles

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy, p.267
Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes, p.273
EPR Identification of Defects and Impurities in SiC: To be Decisive, p.279
Defects Identified in SiC and Their Implications, p.285
Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces, p.291
Sense Determination of c-Axis Screw Dislocations in 4H-SiC, p.297
Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer , p.301
High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers , p.305
Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC , p.309

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Paper Title:

Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces

Periodical	Materials Science Forum (Volumes 600 - 603)
Main Theme	Silicon Carbide and Related Materials 2007
Edited by	Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages	291-296
DOI	10.4028/www.scientific.net/MSF.600-603.291
Citation	Charíya Virojanadara et al., 2008, Materials Science Forum, 600-603, 291
Online since	September, 2008
Authors	Charíya Virojanadara, M. Hetzel, Leif I. Johansson, Wolfgang J. Choyke, Ulrich Starke
Keywords	4H-SiC(1-102) , Atomic Structure, Electronic Structure, LEED, One Dimension, Photoemission, STM
Price	US$ 28,-

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Abstract

The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission (PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The (2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires with electronic states confined to one dimension. For the c(2×2) phase STM indicates the presence of adatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic model for this c(2×2) phase is proposed.