Paper Title:
Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces
  Abstract

The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission (PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The (2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires with electronic states confined to one dimension. For the c(2×2) phase STM indicates the presence of adatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic model for this c(2×2) phase is proposed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
291-296
DOI
10.4028/www.scientific.net/MSF.600-603.291
Citation
C. Virojanadara, M. Hetzel, L. I. Johansson, W. J. Choyke, U. Starke, "Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces", Materials Science Forum, Vols. 600-603, pp. 291-296, 2009
Online since
September 2008
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$32.00
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