Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 3-6 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.3 |
| Citation | Masashi Nakabayashi et al., 2008, Materials Science Forum, 600-603, 3 |
| Online since | September, 2008 |
| Authors | Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Hiroshi Tsuge, Hirokatsu Yashiro, Takashi Aigo, Taizo Hoshino, Hosei Hirano, Kohei Tatsumi |
| Keywords | 100mm-Diameter SiC Substrate, Lateral Enlargement Growth, Thermoelastic Stress |
| Abstract | The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability. |
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