Paper Title:
High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
  Abstract

Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
305-308
DOI
10.4028/www.scientific.net/MSF.600-603.305
Citation
I. Kamata, M. Nagano, H. Tsuchida, Y. Chen, M. Dudley, "High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers ", Materials Science Forum, Vols. 600-603, pp. 305-308, 2009
Online since
September 2008
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