Paper Title:
Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
  Abstract

We have investigated dislocation image of 4H-SiC wafers projected on synchrotron X-ray topographs taken under different positions in the rocking curve of a diffraction peak. The diffraction geometry was grazing-incidence extremely asymmetric and the diffraction vectors were g = 1 1 2 8 and 112 8. The weak-beam images were demonstrated for basal-plane dislocations and threading-screw dislocations. The basal-plane dislocation images became narrower in width at the off-Bragg conditions, and they were decomposed to separate lines under the weak-beam condition. The threading-screw dislocations showed changes in their shape and contrast as the crystal set was tilted from the rocking-curve peak, and finally the characteristic images near the dislocation core were observed under the weak-beam condition. The origin of these weak-beam images is unclear, but it will offer detailed analysis of the dislocations.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
313-316
DOI
10.4028/www.scientific.net/MSF.600-603.313
Citation
H. Yamaguchi, H. Matsuhata, I. Nagai, "Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition ", Materials Science Forum, Vols. 600-603, pp. 313-316, 2009
Online since
September 2008
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$32.00
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