Paper Title:
Raman Scattering Study of Stress Distribution around Dislocation in SiC
  Abstract

We have presented a combined method of microscopic measurements between Raman scattering and polarizing optical microscope to characterize inhomogeneous residual stress distributions around dislocations in 4H- and 6H-SiC wafers. First, stressed portions were found in wafers by an optical polarizing microscope under a crossed Nicole arrangement. Then, the portions were examined by Raman-imaging technique for lateral variations of phonon spectra. The residual stresses were quantified from the phonon-peak frequency shift using a known frequency-shift rate for 6H-SiC. Characterization to the depth direction was also conducted by surface etching with molten KOH. The stresses typically amounted to the order of 100 MPa. In a 4H-SiC homoepitaxial wafer sample, we observed threading dislocations transferred from the substrate to the epitaxial layer, and found that larger stress fields existed in the epitaxial layer than the substrate. We also observed stress distributions around compressively stressed sub-grain boundaries.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
337-340
DOI
10.4028/www.scientific.net/MSF.600-603.337
Citation
D. Matsuoka, H. Yamamoto, S. Nishino, N. Hasuike, K. Kisoda, H. Harima, "Raman Scattering Study of Stress Distribution around Dislocation in SiC ", Materials Science Forum, Vols. 600-603, pp. 337-340, 2009
Online since
September 2008
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$32.00
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