Paper Title:
Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
  Abstract

Material defects such as Si-core and C-core partial dislocations (PDs) and threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are being investigated for their contributions to device performances in 4H-SiC. Non-destructive electroluminescence and photoluminescence techniques can be powerful tools for examining these dislocations. In this report, these techniques were used to reveal the different spectral characteristics for the mentioned dislocations. At higher injection levels, both the Si-core and C-core PDs possessed a spectral peak at 700 nm. However, at lower injection levels, the spectral peak for the Si-core PD remained at 700 nm while the peak for the C-core moved to longer wavelengths. For the threading dislocations, TSDs possessed a peak between 800 and 850 nm while the TEDs possessed a peak at 600 nm independent of the injection levels.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
345-348
DOI
10.4028/www.scientific.net/MSF.600-603.345
Citation
K. X. Liu, X. Zhang, R. E. Stahlbush, M. Skowronski, J. D. Caldwell, "Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers ", Materials Science Forum, Vols. 600-603, pp. 345-348, 2009
Online since
September 2008
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$32.00
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