Paper Title:
Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
  Abstract

The influence of electron-beam irradiation on defects in 4H-SiC diode structures was investigated by cathodoluminescence (CL) microscopy and spectroscopy. In addition to threading edge and screw dislocations, two types of stacking faults (SFs) were characterized by their emission energy, geometric shape, and the sensitivity of electron-beam irradiation. The SFs at λ = 425 nm (2.92 eV) expand from the surface of basal plane dislocation with line direction [11-20] and change their geometric shape by electron-beam irradiation. The SFs at λ = 471 nm (2.63 eV) are only slightly influenced by electron-beam irradiation. The former corresponds to the Shockley-type SFs previously observed in the degraded p-i-n diodes, and the latter to in-grown SFs with 8H structure. The panchromatic CL images constructed by the sum of monochromatic CL images suggest that there are nonradiative recombination centers in the vicinity of Shockley-type SFs. The nucleation sites and the driving force for SF expansion are discussed.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
353-356
DOI
10.4028/www.scientific.net/MSF.600-603.353
Citation
R. Sugie, M. Yoshikawa, S. Harada, Y. Namikawa, "Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure", Materials Science Forum, Vols. 600-603, pp. 353-356, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: X.P. Zhu, Tsuneo Suzuki, Hisayuki Suematsu, Wei Hua Jiang, Koichi Niihara
Abstract:Nitriding of titanium was achieved in a vacuum of ~2×10-2 Pa by applying intense pulsed ion beam (IPIB) irradiation. Various phases including...
17
Authors: Yan Jin, Jian Jun Hu, Hong Bin Xu
Embedded System
Abstract:The electron beam polishing equipment technology is brought forward and its characteristic is explained because general processing method...
1555
Authors: Fatin Syazana Jamaludin, Mohd Faizul Mohd Sabri
Abstract:The aspect ratio of microholes milled on silicon by FIB/SEM milling was investigated with various beam currents and initial depths of mill....
436
Authors: Dong Hui Zhang, Chun Dong Liu, Landi Zhang, Zhan Ying Wang
Chapter 16: Laser Processing
Abstract:An experimental measuring method of flight trajectory of edge electron of the electron-beam in the electron gun of furnace was designed....
2388
Authors: J. Kaupužs, Arturs Medvid'
Chapter 1: Solid-State Physics and Related Technologies
Abstract:The photo current-voltage characteristic of a solar cell with graded band gap is calculated numerically based on the drift-diffusion equation...
114