Paper Title:
Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
  Abstract

Electron-hole recombination activated Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations have been studied in 4H-SiC epitaxial layers using synchrotron x-ray topography. The bounding partials appear as white stripes or narrow dark lines in back-reflection X-ray topographs recorded using the basal plane reflections. Such contrast variations are attributable to the defocusing/focusing of the diffracted X-rays due to the edge component of the partial dislocations, which creates a convex/concave distortion of the basal planes. Simulation results based on the ray-tracing principle confirm our argument. The sign of the partial dislocations can be subsequently determined.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
357-360
DOI
10.4028/www.scientific.net/MSF.600-603.357
Citation
Y. Chen, X. R. Huang, N. Zhang, M. Dudley, J. D. Caldwell, K. X. Liu, R. E. Stahlbush, "Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers", Materials Science Forum, Vols. 600-603, pp. 357-360, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A.K. Semennikov, S.Yu. Karpov, M.S. Ramm, A.E. Romanov, Yuri N. Makarov
383
Authors: Manfred Reiche
Abstract:The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of...
57
Authors: Michael Dudley, Yi Chen, Xian Rong Huang, Rong Hui Ma
Abstract:A review is presented of the current understanding of the dislocation configurations observed in PVT-grown 4H- and 6H-SiC boules and...
261
Authors: Fang Zhen Wu, Huan Huan Wang, Sha Yan Byrapa, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren M. Hansen, Roman Drachev, Stephan G. Mueller, Mark J. Loboda
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Synchrotron White Beam X-ray Topography (SWBXT) imaging of wafers cut parallel to the growth axis from 4H-SiC boules grown using Physical...
343
Authors: Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida
Chapter 7: Electrical and Structural Characterization
Abstract:Basal plane dislocations (BPDs) converting to threading edge dislocations (TEDs) has been observed in 4H-SiC epilayers after thermal...
601